讲师
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柴晓杰

学历:博士研究生

学科:电子科学与技术

研究领域或方向:神经形态忆阻器、触觉传感器

邮箱:chaixiaojie@tyut.edu.cn

职称:讲师

  • 个人简介
  • 主要成果
  • 【学习经历】

    2017.09—2021.06  博士研究生   复旦大学  微电子与固体电子学

    2013.09—2016.04  硕士研究生  西北工业大学   材料工程

    2008.09—2012.07  大学本科    山西大同大学   物理学

    【工作经历】

    2021.10— 至今  太原理工大学信息与计算机学院 讲师
  • 【项目】

    1. 深圳华为2012研究院,YBN2020065115,新型高性能铁电导电畴壁晶体管, 2020/08-2022/8,200万元,在研,参与

    2. 复旦大学卓越博士生科研促进计划资助项目,SSH6281011/001,基于畴壁电流的多功能铁电器件的研究,2019/05-2020/5,1万元,结题,主持

    3. 深圳华为海思研究部,YBN2019075075,新型 Domain-Wall 类 LN-FRAM 技术合作项目,2019/08-2020/2,300万元,结题,参与

    4. 上海市科技人才计划项目,17JC1400301,下一代高性能通用铁电存储器,2017/09-2020/11,1000万元,结题,参与

    【论文】

    [1] Xiaojie   Chai, Jun Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu,   David Wei Zhang, An Quan Jiang*. Nonvolatile ferroelectric field-effect   transistors, Nature communications,2020, 11(1):   1-9.    

    [2] Xiaojie   Chai, Jianwei Lian, Chao Wang, Xiaobing Hu, Jie Sun, Jun Jiang, Anquan   Jiang*. Conductions through head-to-head and tail-to-tail domain walls in   LiNbO3 nanodevices. Journal of Alloys and Compounds, 2021,   873: 159837.  

    [3] Xiaojie   Chai, Hui Xing, Kexin Jin*. Evolution of photoinduced effects in   phase-separated Sm0.5Sr0.5Mn1-yCryO3   thin films. Scientific reports, 2016, 6(1): 1-7.  

    [4] Anquan   Jiang , Wenping Geng, Peng Lv, Jiawang Hong , Jun Jiang, Chao Wang, Xiaojie   Chai, Jianwei Lian, Yan Zhang, Rong Huang, David Wei Zhang, James F.   Scott, Cheol Seong Hwang*. Ferroelectric domain wall memory with embedded   selector realized in LiNbO3 single crystals integrated on Si   wafers. Nature Materials, 2020, 19(11): 1188-1194.

    [5]   Jianwei Lian, Xiaojie Chai, Chao Wang, Xiaobing Hu, Jun Jiang*, An   Quan Jiang . Sub 20 nm-Node LiNbO3 Domain-Wall Memory. Advanced   Materials Technologies, 2021: 2001219.    

    [6]   Jun Jiang, Xiaojie Chai, Chao Wang, Anquan Jiang*. High temperature   ferroelectric domain wall memory. Journal of Alloys and Compounds,   2021, 856: 158155.    

    [7]   Chao Wang, Jun Jiang, Xiaojie Chai, Jianwei Lian, Xiaobing Hu, and An   Quan Jiang*. Energy-efficient ferroelectric domain wall memory with   controlled domain switching dynamics. ACS Applied Materials &   Interfaces, 2020, 12(40): 44998-45004.    

    [8]   Jun Jiang, Chao Wang, Xiaojie Chai, Qinghua Zhang, Xu Hou, Fanqi Meng,   Lin Gu, Jie Wang, and An Quan Jiang*. Surface-Bound Domain Penetration and   Large Wall Current. Advanced Electronic Materials, 2021, 7(3):   2000720.    

    [9] Jianwei   Lian, Jiajia Tao, Xiaojie Chai, Yan Zhang, Anquan Jiang*. Effects of   atmosphere, metal films, temperatures and holding time on the surface   topography and electrical conductivity of LiNbO3 single crystals. Ceramics   International, 2019, 45(8): 9736-9753.    

    [10]   Yan Zhang, Qinghua Ren, Xiaojie Chai, Jun Jiang, Jianguo Yang, Anquan   Jiang*. Improved Ferroelectric Performance of Mg-Doped LiNbO3   Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel   Switch Layer. Nanoscale research letters, 2019, 14(1): 1-8.
         
    【专利】

    [1] Anquan   Jiang, Xiaojie Chai, Yan Zhang, THREE-DIMENSIONAL NON–VOLATILE FERROELECTRIC MEMORY, 2021.4-2038.12, 美国, 授权号:US10971204 B2  

    [2] 江安全,柴晓杰,张岩。一种低功耗三维非易失性存储器及其制备方法。授权号:CN109378313 B。

    [3] 江安全,柴晓杰,江钧,连建伟,敖孟寒,一种非易失性铁电存储器及其制备方法。授权号:CN112310214 B。  

    [4] 江安全,柴晓杰,胡校兵,江钧,连建伟,蒋旭。一种可擦除全铁电场效应晶体管及其操作方法。授权号:CN110491943B。    

    [5] 江安全,柴晓杰,汪超,江钧,张焱。一种集存算一体的全铁电场效应管。授权号:CN110534573B。