论文、著作、专利 |
【论文】 [1] Xiaojie Chai, Jun Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu, David Wei Zhang, An Quan Jiang*. Nonvolatile ferroelectric field-effect transistors, Nature communications,2020, 11(1): 1-9. [2] Xiaojie Chai, Jianwei Lian, Chao Wang, Xiaobing Hu, Jie Sun, Jun Jiang, Anquan Jiang*. Conductions through head-to-head and tail-to-tail domain walls in LiNbO3 nanodevices. Journal of Alloys and Compounds, 2021, 873: 159837. [3] Xiaojie Chai, Hui Xing, Kexin Jin*. Evolution of photoinduced effects in phase-separated Sm0.5Sr0.5Mn1-yCryO3 thin films. Scientific reports, 2016, 6(1): 1-7. [4] Anquan Jiang , Wenping Geng, Peng Lv, Jiawang Hong , Jun Jiang, Chao Wang, Xiaojie Chai, Jianwei Lian, Yan Zhang, Rong Huang, David Wei Zhang, James F. Scott, Cheol Seong Hwang*. Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers. Nature Materials, 2020, 19(11): 1188-1194. [5] Jianwei Lian, Xiaojie Chai, Chao Wang, Xiaobing Hu, Jun Jiang*, An Quan Jiang . Sub 20 nm-Node LiNbO3 Domain-Wall Memory. Advanced Materials Technologies, 2021: 2001219. [6] Jun Jiang, Xiaojie Chai, Chao Wang, Anquan Jiang*. High temperature ferroelectric domain wall memory. Journal of Alloys and Compounds, 2021, 856: 158155. [7] Chao Wang, Jun Jiang, Xiaojie Chai, Jianwei Lian, Xiaobing Hu, and An Quan Jiang*. Energy-efficient ferroelectric domain wall memory with controlled domain switching dynamics. ACS Applied Materials & Interfaces, 2020, 12(40): 44998-45004. [8] Jun Jiang, Chao Wang, Xiaojie Chai, Qinghua Zhang, Xu Hou, Fanqi Meng, Lin Gu, Jie Wang, and An Quan Jiang*. Surface-Bound Domain Penetration and Large Wall Current. Advanced Electronic Materials, 2021, 7(3): 2000720. [9] Jianwei Lian, Jiajia Tao, Xiaojie Chai, Yan Zhang, Anquan Jiang*. Effects of atmosphere, metal films, temperatures and holding time on the surface topography and electrical conductivity of LiNbO3 single crystals. Ceramics International, 2019, 45(8): 9736-9753. [10] Yan Zhang, Qinghua Ren, Xiaojie Chai, Jun Jiang, Jianguo Yang, Anquan Jiang*. Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer. Nanoscale research letters, 2019, 14(1): 1-8. 【专利】 [1] Anquan Jiang, Xiaojie Chai, Yan Zhang, THREE-DIMENSIONAL NON–VOLATILE FERROELECTRIC MEMORY, 2021.4-2038.12, 美国, 授权号:US10971204 B2 [2] 江安全,柴晓杰,张岩。一种低功耗三维非易失性存储器及其制备方法。授权号:CN109378313 B。 [3] 江安全,柴晓杰,江钧,连建伟,敖孟寒,一种非易失性铁电存储器及其制备方法。授权号:CN112310214 B。 [4] 江安全,柴晓杰,胡校兵,江钧,连建伟,蒋旭。一种可擦除全铁电场效应晶体管及其操作方法。授权号:CN110491943B。 [5] 江安全,柴晓杰,汪超,江钧,张焱。一种集存算一体的全铁电场效应管。授权号:CN110534573B。 |